07 韩学峰-海尔贝克阵列磁场对硅熔体流动影响的数值分析.pdf

CSPV2021

海尔贝克阵列磁场对硅熔体流动影响的数值模拟分析

11，21，2

韩学峰，皮孝东，杨德仁

1.浙江大学杭州国际科创中心先进半导体研究院

2.浙江大学硅材料国家重点实验室

2021年12月7日

Introduction

AdvantagesofFZ(floatingzone)silicon:Applicationsofhigh-voltagepower

device:

Impurityconcentration(oxygen,carbon)isElectricalautomobiles

low[1]Electricalhighspeedtrain

Superior-qualityPVcell

[1]B.Nacke,A.Muiznieks,Numericalmodellingoftheindustrialsiliconsinglecrystalgrowthprocesses,GAMM30

(2007)113-124.

Introduction

Issue

GrowthrateInterfacedeflectionCracking

DiameterThermalstress

Interfacedeflection

VonMisesstress

[2]Wünscher,M.,etal.JournalofCrystalGrowth385:100-105.(2014)

[3]R.Menzel,GrowthConditionsforLargeDiameterFZSiSingleCrystals,PhDthesis.Crackingofcrystal

Introduction

Motivation

UsingHalbachmagneticfieldtocontrolthesolid-liquidinterface

Advantages：

1.Lowcost

2.Easyinstallation

SmallcaseLargecase

Nd-Fe-Bmagnets

[4]X.F.Han*,K.Kakimoto,S.Alradi,K.Zaidat,JournalofCrystalGrowth,(2020)

Resultsanddiscussion

Magneticfluxdensityat5mmaboveandbelowthemagnets

[4]X.F.Han*,K.Kakimoto,S.Alradi,K.Zaidat,JournalofCrystalGrowth,(2020)

Numericalmodeling

1.Electromagneticmodel

Calculationprogram:COMSOL

FeedrodMainslit:1mm

Current

supplies