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UltraFastSiCMOSFETGateDriver
ProjectReview
YangLei
Aug8,2013
SiCMOSFEThasasignificantadvantageinhighpowerconverterapplicationduetoitslowertotallossandhigheroperatingtemperature.ThesefeaturesalsoallowSiCMOSFETtooperateatmuchhigherfrequencytoachieveultradensitypowerconverterdesign,anewtrendinpowerelectronics.GatedriversforfuturehighvoltageSiCMOSFETwillthereforemustbedesignedtooperateatmuchhigherfrequency(100kHzorhigherascomparedtotoday’s20kHz)IssuesrelatedtoultrafastdrivingoftheSiCMOSFEThasnotbeenwidelystudiedIssuesrelatedtointelligentdrivingandsensorintegrationofhighvoltageSiCMOSFEThasnotbeenstudied2ResearchMotivation
600V100Aturnon:Eon=2.953mJVGSVDCVDSdvdt:12.17kV/usdidt:4271A/us(Rg:5Ω,Vgs:+20V/-5V)IdsExample:GatedriverchallengesSiCMOSFETturn-onwaveform:100nsswitchingtimeandsevereringing.Worthiffastdrivingisneeded.HighdV/dtanddi/dt.Strongdiodecoupling
Example:GatedriverchallengesVGSVDCVDSdvdt:16.04kV/usdidt:3750A/us(Rg:5Ω,Vgs:+20V/-5V)Ids600V100Aturnoff:Eoff=1.266mJSiCMOSFETturn-offwaveform:100nsswitchingtimeandsevereringing.HighdV/dtanddi/dt.Worthiffastdrivingisneeded
NewProblem:MuchworseringingwhenlowdampingresistorisusedParasiticinductancecausesringingongatevoltage,whichwillgreatlyaffecttheperformanceofgatedriverIC.
dv/dtimpactonthegatedriverVmosfet_gateVacIacdv/dtinducedgatevoltageGatevoltagespikecausedbyMillereffect:negativebiasedgatedriverisused,otherwisefalseturn-onislikely.
SiCMOSFETHighFrequencyGateDriverRequirementsToreduceturn-onandturn-offlossAlargepeakgatecurrent,resultinginafastgatevoltagetransitionandlowswitchingloss.Controllabledi/dt:ControldiodereverserecoveryandassociatedringinginthecircuitHighdV/dtcapability:Alow-impedancecurrentpathbetweenthegateandsourceinoff-stateto
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