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Co-packagedpowermodule
OverviewSiCMOSFETbackgroundanditsgatedriverGatedriverchallengesPriorworkongatedriverICProblemStatementProposedprojecttasksandtimeline
Background:applicationApplication:PVinverter,MotorDrive,WindTurbine,UPSetc.SolarPanelsWindTurbineUPSMotorDrivePowerSupply
Background:SiCMOSFETCharacteristicsSwitchinglosscomparisonTurn-onlossTurn-offloss
Lossperdevicefordifferentswitchingfrequency600Vdcto380Vacsinglephase,20kWInfineonSiIGBTCreeSiCMOSFETBackground:SiCMOSFETCharacteristics
SiCMOSFEThasasignificantadvantageinhighpowerconverterapplicationduetoitshighefficiencyandhighoperatingtemperature.ThesefeaturesalsoallowSiCMOSFETtooperateathigherfrequencytoachieveabetterperformance.SincethetransconductanceofSiCMOSFETislower,gatedriversolutionforSiCMOSFETisgreatlydifferentfromthatisforSiIGBT.GatedriverforSiCMOSFETwillhaveanextansivemarketdemand.6Background:SiCMOSFETCharacteristics
SiCMOSFEThasalowtransconductancethanSiIGBT.Background:SiCMOSFETCharacteristics
SiCMOSFETGateDriverRequirement:SiCMOSFETGateDriverAlargepeakgatecurrent,resultinginafastgatevoltagetransitionandlowswitchingloss.Preventionofvoltageovershootandringingfollowingaswitchingtransition.Alow-impedancecurrentpathbetweenthegateandsourceinoff-state,topreventchannelconductionifdrainvoltagerisessuddenlyduetocurrentinjectionthroughtheMillercapacitance.Theabilitytotolerateparasiticinductanceinthegatedriverpath.
600V100Aturnon:Eon=2.953mJVGSVDCVDSdvdt:12.17kV/usdidt:4271A/us(Rg:5Ω,Vgs:+20V/-5V)IdsGatedriverchallengesSiCMOSFETturn-onwaveform:
GatedriverchallengesVGSVDCVDSdvdt:16.04kV/usdidt:3750A/us(Rg:5Ω,Vgs:+20V/-5V)Ids600V100Aturnon:Eoff=1.266mJSiCMOSFETturn-offwaveform:
dv/dtimpactonthegatedriverVmosfet_gateVacIacdv/dtinducedgatevoltageGatevoltagespikecaused
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