专题讲座3：铝栅PMOSFET的制造流程.ppt

铝栅PMOSFET的制造流程Step0:Startwithabaren-typesiliconwafer.NDopedSilicon1

*Step1:(layering)Growthicklayer(5000?)ofsilicondioxide(fieldoxide)toactasadopingbarrier.NDopedSiliconThickFieldOxide2

*Step2a:(patterning)Applyphotoresist.NDopedSiliconThickFieldOxidePhotoresist3

Step2b:(patterning)Exposephotoresisttocreatetemporarypatternforsource/drainregions.NDopedSiliconThickFieldOxidePhotoresistUltravioletLightPhotomask4

Source/Drain:Photomask(darkfield)ClearGlassChromiumCrossSection5

Step2c:(patterning)Developphotoresist,completingtemporarypatternforsource/drainregions.NDopedSiliconThickFieldOxidePhotoresist6

Step2d:(patterning)Wetetchpermanentopeningsforsource/drainintofieldoxide.NDopedSiliconThickFieldOxidePhotoresist7

Step2e:(patterning)Removephotoresist.Permanentpatternremainsinthesilicondioxide.NDopedSiliconThickFieldOxide8

Source/DrainWindows:MicroscopeViewBareSiliconThickFieldOxideCrossSection9

*Step3a:(doping)Applyp-typespin-ondopantfilm.Boronpenetratesintothesiliconthroughtheholesinthefieldoxidetobeginformationofthesourceanddrainregions.NDopedSiliconP+DrainP+SourceThickFieldOxideBoron-DopedSpin-OnOxide10

Step3b:(heattreatment)Drivedopantsdeeperintosiliconusinghightemperatures(~1000℃),completingformationofthesourceanddrainregions.NDopedSiliconP+DrainP+SourceThickFieldOxideBoron-DopedSpin-OnOxideP+DrainP+SourceChannelLength-Leff11

Step4a:(layering)WetetchtoremoveSODandfieldoxidelayers.NDopedSiliconP+DrainP+Source12

Source/DrainDoping:MicroscopeViewP+DopedSourceandDrain(notactuallyvisible)N-DopedSubstrateCrossSection13

*Step4b:(layering)Regrownewfieldoxidelayer.ThickFieldOxideNDopedSiliconP+DrainP+SourceOxidegrowsslightlythickeroverdopedareas.14

*Step5a:(patterning)Applyphotoresist.ThickFieldOxideNDopedSiliconP+DrainP+Sourc