常用芯片资料——HRB0502A.docxVIP

HRB0502A

SiliconSchottkyBarrierDiodeforRectifying

HITACHI

ADE-208-609(Z)

Rev0

Mar.1998

Features

Lowforwardvoltagedropandsuitableforhighefficincyrectifying.

CMPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

OrderingInformation

TypeNo. LaserMark PackageCode

HRB0502A E3 CMPAK

Outline

1NC

2Anode

3Cathode

HitaclitZ

semiconductor

AbsoluteMaximumRatings(Ta=25℃)

Item

Symbol

Value

Unit

Repetitivepeakreversevoltage

Vrrm

20

V

Averagerectifiedcurrent

Io41

500

mA

Non-Repetitivepeakforwardsurgecurrent

IfSM*2

5

A

Junctiontemperature

Tj

125

℃

Storagetemperature

Tstg

-55to+125

℃

Notes1.SeefromFig.4toFig.6

Notes2.10msecsinewave1pulse

ElectricalCharacteristics(Ta=25℃)

Item

Symbol

Min

Typ

Max

Unit

TestCondition

Forwardvoltage

Vf

—

—

0.4

V

If=500mA

Reversecurrent

Ir

—

—

200

pA

VR=20V

Capacitance

c

—

120

—

pF

VR=0V,f=1MHz

Thermalresistance

Rth(j-a)

—

450

—

℃/W

Polyimideboard1

Notes1.Polyimideboard

MainCharacteristic

()LL-c①tnoPBMJOL

0 5 10 15 20 25

NT-4-5O-O-O-O-1111)a-caun。OS」①

ForwardvoltageVp(V)

ForwardcurrentVs.Forwardvoltage

ReversevoltageVR(V)

ReversecurrentVs.Reversevoltage

Fig.3CapacitanceVs.Reversevoltage

(LL.d)0①susoede。

MainCharacteristic

/orwardpowerdissipationVs.Forwardcurrent

(M)Pduo-1ed-ss-p」8M0dP」BM」OL

10 15 20 25

D=5/6

D=2Z-

D=1/2

o.5o

6

o

2

ReversevoltageggVrpy

Fig5.ReversepowerdissipationVs.Reversevoltage

Fig.6AveragerectifiedcurrentVs.Ambienttemperature

JtA10IItpI

OMcobn。P2七oal①6。」①4

PackageDimensions

2.0士

LaserMark

0.2

LO

CMnq+0.1 V

UP—0.05O

0-0.1 1NC

3_

E3

山2nq+0.1u-0-0.05

na+。.1

UP-0.05

0.65 ] 0.65

1.3±0.2*

6+igCN

2Anode

3Cathode

HitachiCode

CMPAK

JEDECCode

—

EIAJCode

SC-70

Weight(g)

0.006

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