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Bipolartransistor;§3-1Introduction;BipolarTransistor;BipolarTransistor;BipolarTransistor;BipolarTransistor;ModernBJT;2023/11/22;Closeenoughthatminoritycarriersinteract(negligiblerecombinationinbase);Bipolaroperation;§3-2Carrierdistribution;CurrentFlow;BipolarTransistor;Anidealizedp-n-ptransistorinthermalequilibrium,thatis,whereallthereleadsareconnectedtogetherorallareground.;TransistorAction;CurrentFlow;TransistorAction;CurrentGain;CurrentGain;Collectorcurrent;CarrierProfileinActiveMode;Carrierdistributioninthisregion;CarrierDistributionineachRegion;Bytheboundaryconditionsfortheactivemode:;Carrierdistribution;CarrierDistributionineachRegion;Commonbase;Commonbaseconfiguration;Commonemitter;Commonemitterconfiguration;§3-3Current-voltagecharacteristicsofidealBJT;IdealBJT;IdealBJTsimplifications:;Simplified1Dmodelofintrinsicdevice:;Regimesofoperation:;Basicoperationinforwardregime:;VBE0;Transistoreffect:electronsinjectedfromEtoB,extractedbyC;Inforward-activeregime:;CarrierprofilesinTEandFAR:;2023/11/22;Dominantcurrentpathsinforwardactiveregime:;IC:electroninjectionfromEtoBandcollectionintoC;Forward-activeregime(VBE0,VBC0);Boundaryconditions:;Collectorcurrentscaleswithareaofbase-emitterjunctionAE:;Collectorterminalcurrent:;;Boundaryconditions:;Basecurrentscaleswithareaofbase-emitterjunctionAE:;Gummelplot:;2023/11/22;Keyconclusions;Keyquestions:;Forward-activeregime(VBE0,VBC0);;Currentgain;;2023/11/22;Equivalentcircuitmodel;Energybanddiagram;Summeryofminoritycarrierprofiles(nottoscale);Reverseregime(VBE0,VBC0);Minoritycarrierprofiles(nottoscale):;Currentequations(justlikeFAR,butroleofcollectorandemitterreversed):;Equivalent-circuitmodelrepresentation:;PrefactorinIEexpressionisIS:emittercurrentscaleswithAE.;But,IBscalesroughlyasAC:;Energybanddiagram:;Cut-offreg
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