微纳加工技术发展概述详解.pptVIP

n+ n+ p+ p+ G端为高电平时导通 G端为低电平时导通 * 第三十页，共五十六页。 * 反向器 输入：高电平，相当于1，输出0 输入：低电平，相当于0，输出1 没有形成回路，功耗低 第三十一页，共五十六页。 CMOS CMOS (Complementary Metal Oxide Semiconductor) : PMOS管和NMOS管互补共同构成的MOS集成电路。 * 第三十二页，共五十六页。 ? Metal Planarization required for multiple metal layers – – – – – – Metal Deposition Patterning Fill Dielectric Planarization Contact vias Contact Deposition Multiple Metal Layers * 第三十三页，共五十六页。 ? ICs are widely regarded as one of the key components of the information age. ? Basic inventions between 1945 and 1970 laid the foundation for today‘s silicon industry. ? For more than 40 years, Moores Law (a doubling of chip complexity every 2-3 years) has held true. ? CMOS has become the dominant circuit technology because of its low DC power on sumption, high performance and flexible design options. Future projections suggest these trends will continue at least 15 more years. ? Silicon technology has become a basic “toolset” for many areas of science and engineering. ? Computer simulation tools have been widely used for device, circuit and system design for many years. CAD tools are now being used for technology design. ? Chapter 1 also contains some review information on semiconductor materials semiconductor devices. These topics will be useful in later chapters of the text. Summary of Key Ideas * 第三十四页，共五十六页。 Richard Feynman,1959 “There’s Plenty of Room at the Bottom” * 一根头发 =100微米=100000纳米 1.3 MEMS技术简介 第三十五页，共五十六页。 MEMS系统的定义 MICRO-ELECTRO-MECHANICAL SYSTEMS，集物理、化学和生物的传感器、执行器与信息处理和存储为一体的微型集成系统。 * * 第三十六页，共五十六页。 (Tai, Fan Muller) 1970 1980 HNA 1960 EDP Pressure Sensor (Honeywell) Anodic Bonding KOH Si Pressure Sensor (Motorola) MEMS的历史 Si as a mechanical material (Petersen) SFB TMAH 1990 Thermo-pneumatic valve (Redwood) SFB Pressure Sensor (NovaSensor) DRIE !! XeF2/BrF3 2,000 process (US Patent) 1950 RGT (Nathanson et al) Metal Light Valve (RCA) ADXLAccelerometer PolySi Micromotor IR imager (Honeywell) PolySi