HYG020N04NA1P华羿微NMOS规格书.pdf

HYG020N04NA1P/B/PL N-Channel Enhancement Mode MOSFET Feature Pin Description  40V/220A RDS(ON) 1.8mΩ(typ.)@VGS 10V  100%Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHSCompliant) TO-220FB-3L TO-263-2L Applications  Switching application  Li-battery protection TO-3PM-3L Ordering and Marking Information N-Channel MOSFET Package Code P B PL P :TO-220FB-3L B :TO-263-2L G020N04 G020N04 G020N04 PL:TO-3PM-3L Date Code XYMXXXXXX XYMXXXXXX XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nationfinish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- mentsof IPC/JEDECJ-STD-020for MSLclassificationat lead-free peak reflow temperature. HUAYIdefines “Green” to mean lead-free (RoHScompliant)and halogenfree (BrorCldoes not exceed 900ppm byweight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes,corrections,enhancements, modifications,and improvements to this pr -oduct and/orto this document at any timewithout notice. V1.0