APG40N10NF 40A 100V DFN5X6 场效应管规格书.pdf

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APG40N10NF DFN5*6-8L APG40N10NF XXX YYYY 5000 Absolute Maximum Ratings at T =25℃ unless otherwise noted j Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V Continuous drain current1), T =25 ℃ ID 40 A C Pulsed drain current2) , T =25 ℃ 120 A C ID, pulse 3)