磁控溅射法制备CIGS薄膜太阳能电池的工艺及性能研究.docx

第32卷第8期真空科学与技术学报2012年8月a缸NESE．的I脲NAI．0F、傀C删sc：Ⅱ：NCE AND TEC}矾0Ⅸ)GY 661磁控溅射法制备CIGS薄膜太阳能电池的工艺及性能研究栾和新。庄大明曹明杰刘江 (清华大学机械工程系北京100084)Growth and Characterization of Copper Indimn GalliumDiselenide Films for Solar Cells Fabricationhum Hexin。，Zhuang Darning，Cao Mingjie，Liu Jiang(n狃珊删旷嬲—涮D讲船莉磬，Ts／nghua砺觑嘶，＆咖曾100084，Ch／na)Abstract The Cu(Inl一；G‰)Se2(CIGS)films were deposited by magnetron sputtering，followed bY post annealing in a mixture of Ar and Se at a reduced atmospheric pressure．The influencing growth factors，including the deposition mte，sputtering power，锄ealiIlg temporature and annealing time，on electrical properties of the CIGS were evaluated．The mi— crostmctures of the CIGS films were characterized with X—ray diffraction，X-ray fluorescence，scanning electron mi—croscopy，and Hall effect spectroscopy．The results show that the post annealing temperature and annealing time strongly affect the stoichiometries，texture，and phase structures of the CIGS films．For instance，after annealing at,100。C for 120 min，the rE：一crystallization resuhed in copper pyrite phased CIGS films，accompanied by segregation of Cu and Se．Below 350℃．the impact of annealing was non-observable．The prototyped solar cens were fabricated with the CIGS films as theabsorption layer，and the highest conversion efficiency Was found to be 7．69％． Keywords Solar cell，Auneahng，Magnetmn sputtering，CIGS fdrns，CIGS target．摘要采用磁控溅射方法直接溅射铜铟镓硒(aGS)靶材，制备得到了用于太阳能电池吸收层的CIGS薄膜，然后在se气 氛中对该CIGS薄膜进行退火处理。采用扫描电镜、X射线衍射、Raman、XRF、Hall等方法观察和分析了退火的主要工艺参数对 薄膜表面形貌、组织结构、成分以及电学性能的影响，并制备了CIGS太阳能电池。结果表明，采用磁控溅射CIGS靶材+Se气 氛中退火处理的方法，可以制备得到成分均匀、电学性能优良、单一黄铜矿相的CIGS薄膜；退火温度和退火时间是影响退火后 薄膜质量的主要因素。退火温度低于350cl：1t．j，退火效果不明显。退火温度在400℃，退火时间达120min时，薄膜完成再结晶 过程，并制得单一黄铜矿相的CIGs薄膜；退火过程存在Cu—Se二次相的析出和消融，同时具有为薄膜补Se的作用。本文采用 该方法制备出的CIGS太阳能电池的最高转换效率为7．69％。关键词太阳能电池退火处理磁控溅射铜铟镓硒铜铟镓硒靶材中图分类号：TM615文献标识码：Adoi：10．3969／j．istm．1672—7126．2012．憾．眦铜铟镓硒(Cu(InhGa；)Se2，简写为CIGS)薄膜 金属预置膜+硒化两步法。前者需要对每种元素的 太阳能电池由于其具有高光吸收系数、高转换效率、 蒸发速率和沉积量进行精确控制，要求设备具有很 可调的禁带宽度、高稳定性、