Pchannel Power MOSFETs Approach NChannel （p沟道功率n沟道mosfet的方法）.pdf

feature design Abdus sAttAr, Applications Manager dr. Kyoung-WooK seoK, RD Manager IXYS Corp., Milpitas, Calif. P-channel Power MOSFETs Approach N-Channel Performance sing the latest generation of trench and polar power MOSFET tech- a new family of P-Channel nologies, both trench and polar P-channel power MOSFETs have been MOSFets provides perfor- developed that retain all the features of comparable N-channel power mance similar to n-Channel MOSFETs, including very fast switching, voltage control, ease of par- alleling and excellent temperature stability. Intended for applications MOSFets, including fast that require the convenience of reverse polarity operation, they have switching and reverse polarity Uan n-type body region that provides lower resistivity in the body region operation. and good avalanche characteristics, because the parasitic PNP transistor is less prone to 1 turn-on. Compared with N-channel power MOSFETs having similar design features, P-channel power MOSFETs have better forward-bias safe operating area (FBSOA) 2 and are practically immune to single-event burnout phenomena. The most important advantage of P-channel power MOSFETs is