1.1.411.086 表贴超低功耗异步SRAM存储芯片IS66WV25616BLL-55TLI TSOP2-44 ISSI.pdf

IS66WV25616ALL IS66WV25616BLL 4Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES DESCRIPTION • High-speed access time: 55ns The ISSI IS66WV25616ALL/BLL is a high-speed, 4M • CMOS low power operation bit static RAMs organized as 256K words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. – mW (typical) operating This highly reliable process coupled with innovative circuit – µW (typical) CMOS standby design techniques, yields high-performance and low power • Single power supply consumption devices. – 1.7V--1.95V Vdd (66WV25616ALL) (70ns) When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or both LB and UB are HIGH, the device – 2.5V--3.6V Vdd (66WV25616BLL) (55ns) assumes a standby mode at which the power dissipation • Three state outputs can be reduced down with CMOS input levels. • Data control for upper and lower bytes Easy memory expansion is provided by using Chip Enable • Industrial temperature available and Output Enable inputs. The active LOW Write Enable • Lead-free available (WE) controls both writing and reading of the memory. A