采用中频反应磁控溅射技术沉积氮化锆薄膜.pdf

第28 卷 　第2 期 材　料　热　处　理　学　报 Vol . 2 8 　No . 2 2 0 0 7 年 　4 月 TRANSACTIONS OF MATERIALS AND HEAT TREATMENT April 2 0 0 7 采用中频反应磁控溅射技术沉积氮化锆薄膜 杨钰瑛 , 　孙维连 , 　李新领 , 　王会强 , 　孙玉梅 (河北农业大学机电工程学院 , 河北 保定 　071001) 摘 　要 : 采用中频反应磁控溅射技术沉积 ZrN 薄膜 ,在真空镀膜机内对称安装了 3 对矩形孪生靶。利用等离子体发射光谱和质 谱仪 QMS200 分别实时监控真空炉内靶材表面的谱线变化和各种气氛的分压强 ,并通过控制系统氮气流量自动调控 ,从而消除了 靶中毒和打火现象 ,确保了溅射镀膜的稳定进行。通过对氮化锆膜层的显微组织观察、X 射线衍射和俄歇半定量分析 ,沉积的氮 化锆薄膜膜层致密 ,与基体的结合牢固。结果表明 :当炉内氮气分压强为 45 % ,控制靶电压 200V ,靶电流为 25A ,逐步调节 Ar 与 N2 比例 ,可获得成分均匀 ,膜层致密 ,结合力较好的金黄色氮化锆薄膜。 关键词 : 中频溅射; 　孪生对靶 ; 　氮化锆 ; 　薄膜 ( ) 中图分类号: TG1741444 ; 　TG13215 　　　文献标识码 : A 　　　文章编号 : 100926264 2007 0220030203 Zr N films deposited by the technology of mid2frequency reactive magnetron sputtering YANG Yu2ying , 　SUN Wei2lian , 　LI Xin2ling , 　WANG Hui2qiang , 　SUN Yu2mei (Mechanical and Electronic Engineering College , Agriculture University of Hebei , Baoding 071001 ,China) Abstract :Three pairs of rectangular twin2targets were installed symmetrically in the vacuum chamber when the ZrN films were deposited by mid2 frequency reactive magnetron sputtering technique. A plasma emission spectrometer and QMS200 mass spectrometer were respectively used to measure the spectrum line and the partial pressure of the gases , and through automatic controlling of the flux of nitrogen , the target poisoning and electrical discharge were eliminated and thus the stability of the sputtering deposition was insured. Through the microstructure observation , X2ray diffraction and AES analysis , it is found that the ZrN films are compacted and combined fast with the substrate. The results indicate th