femag晶体生长模拟软件横向磁场直拉硅晶体生长的全局模拟.ppt

femag晶体生长模拟软件横向磁场直拉硅晶体生长的全局模拟.ppt

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femag晶体生长模拟软件横向磁场直拉硅晶体生长的全局模拟

* * * * * * * FEMAGSoft ? 2013 Oxygen concentration (m-3): top left: parallel cross section in melt; bottom left: perpendicular cross section in melt; top right: crystal Case 3 Crystal diameter: 400 mm Pulling rate: 0.45 mm/min Crucible rotation rate: 5 RPM Magnetic field type: horizontal Magnetic field strength: 5000 G Gas flow: no Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Case 1 Crystal diameter: 400 mm Pulling rate: 0.45 mm/min Crucible rotation rate: 5 RPM Magnetic field type: horizontal Magnetic field strength: 3000 G Gas flow: no Oxygen concentration (m-3): top left: parallel cross section in melt; bottom left: perpendicular cross section in melt; top right: crystal Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Ovoid magnetic field: top left: sketch of the magnetic field; bottom left: side view; right: top view Case 4 Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Ovoid magnetic field: top left: sketch of the magnetic field; bottom left: side view; right: top view Case 4 Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Case 4 Temperature field (K): top left: parallel cross section; bottom left: perpendicular cross section; top right: top view Crystal diameter: 400 mm Pulling rate: 0.45 mm/min Crucible rotation rate: 5 RPM Magnetic field type: ovoid Magnetic field strength: ±3000 G Gas flow: no Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Crystal diameter: 400 mm Pulling rate: 0.45 mm/min Crucible rotation rate: 5 RPM Magnetic field type: horizontal Magnetic field strength: 3000 G Gas flow: no Temperature field (K): top left: parallel cross section; bottom left: perpendicular cross section; top right: top view Case 1 Cz Si growth under a TMF (cont’d) FEMAGSoft ? 2013 Velocity field (m.s-1): top left: parallel cross section; bottom left: perpendicular cross section Case 4 Crystal diameter: 400 mm Pulling rate: 0.45 mm/min Crucible rotation rate: 5 RPM Magnetic field type: ovoid Magnetic field strength: ±3000 G Gas flow: no Cz Si

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