A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Tec.pdf

第 27 卷 　第 2 期 半 　导 　体 　学 　报 V ol . 27 　N o . 2 2006 年 2 月 C H IN ES E J O U RN AL O F S EM I CON D U C TO RS Feb . ,2006 A Ne w CMOS Image Sensor with a High Fill Factor and the Dyna mic Digital Double Sampl ing Technique L iu Yu 1 ,2 , a n d W a n g Gu oyu 1 ,2 ( 1 Sch ool of Elect r onic a n d I nf or m at i on Engi neeri ng , Xi ’an J i aot ong U niversit y , Xi ’an 　7 10049 , Chi n a) (2 I nst it ut e of Semicon duct ors , Chi nese Aca demy of Sciences , Beij i ng 　100083 , Chi n a) μ Abstract : A sin gle CM OS i m age se ns or b ase d on a 0 . 35 m p r ocess al on g wit h its design a n d i mp lem e nt at i on is in t r oduce d . Th e ar c hit ect ur e of a n act ive p ixel se nsor is use d in t h e chip . Th e f ill f act or of a p ixel cell ca n r e ach 43 % , high er t h an t h e t r a dit i on al f act or of 30 % . M or e over , c omp ar e d wit h t h e c onve nt i on al m et h od w h ose f ixe d p at t er n n oise ( F PN ) is ar ou n d 0 . 5 % , a dyn a mic digit al double sa mp ling t ech ni que is devel op e d , w hic h p ossesses si mp ler cir cuit ar c hit ect ur e an d a bet t er F PN supp r essi on out c ome . Th e CM OS i m age se nsor c hip is i mp lem e nt e d in μ t h e 0 . 35 m mixe d sign al p r ocess of a Ch ar t er e d by M PW . Th e exp eri m ent al r esults sh ow t h