MIM二极管的电学机理.pptVIP

the electro mechanic of MIM diode in e-paper displayer Spring 2011 Outline electro mechanic of MIM diode main electro mechanic of MIM structure resonan tunneling of MIM structure Al-Ta2O5-Al energy bend P-F effect parameter and calculation asymmetry of the MIM I-V characteristics conclusion reference main electro mechanic MIM structure main electro mechanic MIM structure resonan tunneling of MIM structure resonan tunneling of MIM structure C low-?eld conductivity E electric field intensity q electric charge Φs barrier height for the trap level β barrier lowering coef?cients ξ slope parameter k Boltzmann constant T thermodynamic temperature C low-?eld conductivity σ = d *J/V = d * △I/(△V *S) = 3.02845 ×10^-2 E electric field intensity E = V/d q electric charge q = 1.6×10^-19C Φs barrier height for the trap level Φs 0.2v ~0.8 v [1] Φs = 0.2v [2] β barrier lowering coef?cients [3] β = 0.0241484×10^-21 ξ slope parameter according to β/ξKT k Boltzmann constant K=1.3806505×10^-23 J/K T thermodynamic temperature T = 300k I = 3.02845*10^-9 * V *Exp[-(32 – 24.1484*(10 * V)^1/2 ) / 5.0946] The C is fixable for the P-F function The β is 10 times of the experience data β is relateed to the quality of the Ta2O5, take measurements were made at 250K, 275K, 300K, and 325K to fix the slope of the fit . The asymmetry of oxygen ions concentration multilayer insulator film hydrogen heat insulator surface The Research on a Low Cost Flip Chip Bumping Process by Stencil Printing ELECTRONIC COMPONENTS MATERIALS Sep. 2003 Vol.22 No.9 Cu r r e nt Re s e a r c h o n t h e Re a c t i o n b e t we e n S o l Bu mp a nd u n de r Bu mp M e t a l l u r g y S y s d e r t e ms i n Fl i p Ch i p 材料导报 2 0 0 5年 9月第 1 9卷第9期 潘燕玲 倒装芯片锡铅凸块良率的提高 复旦大学 2009年4月15日 MIM 开关器件的伏安特性研究 液晶与显示 1998